| PART |
Description |
Maker |
| STP7NB40FP STP7NB40 5584 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
N - CHANNEL ENHANCEMENT MODE PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
ST Microelectronics
意法半导
STMicroelectronics
|
| ARF450 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 500W 120MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| VP0300LS VP0300L VQ2001P VQ2001J 70217 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V，夹断电0.6A的P沟道增强型MOSFET)
From old datasheet system
P-Channel Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
意法半导
STMicro
|
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated
60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| ARF466FL APT466FL |
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 200V 300W 45MHz
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs
|
ADPOW[Advanced Power Technology]
|
